Introduction

Ion implantation replaced chemical (diffusion) doping for nearly all applications in todays silicon technology. A huge number of papers and books is available which treats the various aspects of ion implantation ranging from impurity profiles over crystal damage and annealing to equipment design. This brief text is not intended to give you a full coverage, even not an overview, it is just considered to accompany a small program written in Ruby [1] called SIMPIMPLANT[2] that allows to draw one dimensional doping profiles, using gaussian distributions, based on the LSS theory. Therefore the focus is put on simple range theory. Excellent introductory texts which give you an overview with further references on the topic are [3] and [4].