Based on the LSS theory the implant profile (projected ranges of a huge number of ions) in an amorphous material can be described by a gaussian distribution due to the statistical nature of the ion stopping process.
The profile is defined by the implanted dose , the projected range and the projected straggle . and are tabulated for various materials and dopants relevant in silicon technology in e. g. . Of course they also depend on the implant energy .
In real applications many times the implantation is done through composite layers of different materials. In this case a simple approximation of the implant profile can be calculated as follows:
The described procedure yields continous, but abrupt changing profiles which are no real, but usable as first approximations (fig. ).
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